sotC 23 pnp silicon low frequency transistor maximum ratings (ta=25 q c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter v cbo v ceo v ebo i c p c tj tstg ?40 v v v a w c c ?32 ?5 ?0.8 0.2 150 ?55 to 150 symbol limits unit electrical characteristics (ta=25 q c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ?40 ?32 ?5 ? ? 120 ? ? ? ? ? ? ? ? ? 200 12 ? ? ? ?0.5 ?0.5 390 ?0.5 ? ? 30 vi c = ?50 a i c = ?1ma i e = ?50 a v cb = ?20v v eb = ?4v v ce = ?3v, i c = ?100ma i c /i b = ?0.5a/ ?50ma v ce = ?5v, i e =50ma, f=100mhz v cb = ?10v, i e =0a, f=1mhz v v a a ? v mhz pf typ. max. unit conditions feature ?high current capacity in compact package. i c = 0.8a. ?epitaxial planar type. ? npn complement: 2sd1781k ? device marking and ordering information device marking shipping 2sb1197kqlt1 ahq 3000/tape&reel 2sb1197krlt1 ahr 3000/tape&reel 2 emitter 3 collector 1 base h fe values are classified as follows : item(*) q r h fe 120~270 180~390 we declare that the material of product compliance with rohs requirements. 2SB1197KXLT1 2012- willas electronic corp.
2012- willas electronic corp. low frequency transistor 2SB1197KXLT1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. low frequency transistor 2SB1197KXLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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